Recent Plasma Processing Technology. Surface Reaction Control in Plasma Etching.

Surface Reaction Mechanisms in Plasma Etching Processes By

Surface chemistry during plasma etching of silicon

Angle-resolved x-ray photoelectron spectroscopy ( X P S ) and laserinduced thermal desorption (LD), combined with laser-induced fluorescence (LIF) detection, were used to study the etching of olycrystalline Si (poly-Si) and single crystal Si(lO0) in high density (1-2 x 10fl ions/cm3), low presswe (0.510 mTorr) C12MBr-containing, helical resonator plasmas. The XPS measurements on both unmasked S...

Numerical Simulation of Bosch Processing for Deep Silicon Plasma Etching

We present a simulation of the Bosch process using the feature-scale modeling software FPS3D. FPS3D is a generic simulator that can be applied to any set of materials, plasmas, reactive gases, and reactions for both 2D and 3D simulations of etching and deposition. FPS3D can simulate multi-time-step processes for which the fluxes, species, reactions, ion energies, angular distributions, and othe...

Particle in Cell-Monte Carlo Collisions of a Plasma Column Driven by Surface Wave Plasma Discharges

In this work, applicability of Particle in Cell-Monte Carlo Collisions (PIC-MCC) simulation method for better understanding of the plasma physical mechanisms and real important aspects of a plasma column driven by surface wave plasma discharges that is used in plasma antennas is examined. Via the implementation of geometry and physical parameters of the plasma column to an Object Oriented PIC-M...

Plasma–surface interaction at atmospheric pressure: A case study of polystyrene etching and surface modification by Ar/O2 plasma jet

ion by atomic O from the polymer chain has been discussed by different research groups as the most important channel for both low pressure plasma and atmospheric pressure plasma RH þ O ! R• þ OH p 1⁄4 10 ; 10 ; 10 ; (5) where p is the estimated reaction probability for the tertiary, secondary, and primary carbon sites provided by Bhoj and Kushner. It can be seen that the tertiary H has the high...